ZHB6718TA دیتاشیت

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مشاهده دیتاشیت ZHB6718TA	دانلود دیتاشیت

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RoHS: true
Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
Datasheet: Diodes Incorporated ZHB6718TA
Transistor Type: 2PCSNPN&2PCSPNP(HBridge)
Operating Temperature: -55°C~+150°C@(Tj)
Collector Current (Ic): 2.5A
Power Dissipation (Pd): 1.25W
Transition Frequency (fT): 140MHz;180MHz
DC Current Gain (hFE@Ic,Vce): 200@2A,2V
Collector Cut-Off Current (Icbo): 100uA
Collector-Emitter Breakdown Voltage (Vceo): 20V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 130mV@2.5A,50mA;190mV@2.5A,200mA
Package: SM-8
Manufacturer: Diodes Incorporated